University of Alberta (Testimonial)

"We, the Nanoelectronics Research Group at the University of Alberta, have been using Microwave Office® in our research. Thanks to your great support, the software has been very helpful to our cause. We have recently published an article in the IEEE Transactions on Nanotechnology entitled, “RF Linearity Potential of Carbon-Nanotube Transistors vs. MOSFETS,” based on our simulations in Microwave Office and further work is in progress."

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Students at the University of Alberta, Alberta, Canada, recently developed a modified top-of-the-barrier model (TBM) for simulating grapheme field-effect transistors (FETs) using AWR's Microwave Office® circuit design software donated through the AWR University Program. The model captures band-to-band (Klein-Zener) tunneling, which is important in zero-bandgap materials, and it accounts for variations in the densities of states between the channel and the source and drain regions. The model is benchmarked against a sophisticated self-consistent Non-Equilibrium Green's Function (NEGF) solver and shows very good quantitative agreement. The utility of the modified TBM is demonstrated by investigating and comparing the RF linearity of grapheme FETs to that of carbon nanotube FETs (CNFETs) and conventional metal oxide semiconductor FETs (MOSFETs). A paper detailing this process was presented at the 2013 International Conference on simulation of Semiconductor Processes and Devices (SISPAD 2013). Entitled, "A Modified Top-of-the-Barrier Model for Graphene and Its Application to Predict RF Linearity," the paper can be read and downloaded at http://in4.iue.tuwien.ac.at/pdfs/sispad2013/12-2.pdf.