Design of a Compact GaN HEMT Doherty Amplifier

Title: Design of a Compact GaN HEMT Doherty Amplifier
Publication: HF Praxis
Date: March 2019
URL: https://www.awrcorp.com/sites/default/files/content/attachments/HF_Praxi...
 
Abstract:
This application note describes the use of NI AWR software, specifically Microwave Office circuit simulator, to design an innovative Doherty amplifier architecture with 200-W high-efficiency broadband 1.8-2.7 GHz gallium arsenide (GaN) high-electron mobility transistor (HEMT) technology.