New Application Note Describes How to Design a GaN HEMT Doherty Amplifier for New-Generation Cellular Transmitters

EL SEGUNDO, Calif. – Dec. 19, 2018

What:
Next-generation 4G/5G telecommunication systems require power amplifiers (PAs) to operate with high efficiency over a wide frequency range to provide multiband and multi-standard concurrent operation. This application note describes the use of NI AWR software, specifically Microwave Office circuit simulator, to design an innovative Doherty amplifier architecture with 200-W high-efficiency broadband 1.8-2.7 GHz gallium arsenide (GaN) high-electron mobility transistor (HEMT) technology. The PA achieved average efficiencies of 50-60 percent for output powers up to 100 W and significantly reduced the cost, size and power consumption of the transmitters.

Where:
The Design of a High-Efficiency Broadband GaN HEMT Doherty Amplifier for New-Generation Cellular Transmitters application note is available at awrcorp.com/resource-library/design-high-efficiency-broadband-gan-hemt-doherty-amplifier-new-generation-cellular.

When:
Immediately.