The Design of Class F, Inverse Class F and Continuous Class F PAs Using Cree GaN HEMTs and AWR’s Microwave Office

Presented by: Ray Pengelly, Cree RF Products, and Mark Saffian, AWR Corp.
Sponsored by: National Instruments

Abstract:
AWR Corporation and Cree Inc. invite power amplifier (PA) designers to learn more about the design of Class F, inverse Class F, and continuous Class F power amplifiers using Cree GaN HEMTs and AWR’s Microwave Office® circuit design software. It focuses on the design of power amplifiers employing gallium nitride (GaN) high electron mobility transistors (HEMTs) to maximize power added efficiencies (PAEs) and how Microwave Office software can be used to optimize source and load-pull at both fundamental and harmonic frequencies.

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